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Silicon Dioxide (Fused Quartz) (SiO2) Sputtering Targets

Silicon Dioxide (Fused Quartz) (SiO2) Sputtering Targets Overview

Our comprehensive offering of sputtering targets, evaporation sources and other deposition materials is listed by material throughout the website. Below you will find budgetary pricing for sputtering targets and deposition materials per your requirements. Actual prices may vary due to market fluctuations. To speak to someone directly about current pricing or for a quote on sputtering targets and other deposition products not listed, please click here.

Silicon Dioxide (Fused Quartz) (SiO2) General Information

Silicon dioxide, also known as silica, has a chemical formula of SiO2. It has a melting point of 1,610°C, a density of 2.648 g/cc, and a vapor pressure of 10-4 Torr at 1,025°C. Silicon dioxide is commonly found in nature as sand or quartz. It is primarily used in the production of glass for windows and beverage bottles. It is evaporated under vacuum for the fabrication of optoelectronic and circuit devices.

Silicon Dioxide (Fused Quartz) (SiO2) Specifications

Material TypeSilicon (IV) Oxide SymbolSiO2 Color/AppearanceWhite, Crystalline Solid Melting Point (°C)1,610 Theoretical Density (g/cc)~2.65 Z Ratio**1.00 SputterRF Max Power Density
(Watts/Square Inch)30* Type of BondIndium, Elastomer CommentsQuartz excellent in E-beam.

* This is a recommendation based on our experience running these materials in KJLC guns. The ratings are based on unbonded targets and are material specific. Bonded targets should be run at lower powers to prevent bonding failures. Bonded targets should be run at 20 Watts/Square Inch or lower, depending on the material.

* Suggested maximum power densities are based on using a sputter up orientation with optimal thermal transfer from target to the sputter cathode cooling well. Using other sputtering orientations or if there is a poor thermal interface between target to sputter cathode cooling well may require a reduction in suggested maximum power density and/or application of a thermal transfer paste. Please contact for specific power recommendations.

** The z-ratio is unknown. Therefore, we recommend using 1.00 or an experimentally determined value. Please click here for instructions on how to determine this value.

For more information, please visit sio2 sputtering.

Z-Factors

Empirical Determination of Z-Factor

Unfortunately, Z Factor and Shear Modulus are not readily available for many materials. In this case, the Z-Factor can also be determined empirically using the following method:

• Deposit material until Crystal Life is near 50%, or near the end of life, whichever is sooner.
• Place a new substrate adjacent to the used quartz sensor.
• Set QCM Density to the calibrated value; Tooling to 100%
• Zero thickness
• Deposit approximately to A of material on the substrate.
• Use a profilometer or interferometer to measure the actual substrate film thickness.
• Adjust the Z Factor of the instrument until the correct thickness reading is shown.

Another alternative is to change crystals frequently and ignore the error. The graph below shows the % Error in Rate/Thickness from using the wrong Z Factor. For a crystal with 90% life, the error is negligible for even large errors in the programmed versus actual Z Factor.

Note:

• ramp up and ramp down procedures. This process may not be necessary with other materials. Targets that have a low thermal conductivity are susceptible to thermal shock. Please Ramp Procedure for Ceramic Target Break-in.

  This material may require specialandprocedures. This process may not be necessary with other materials. Targets that have a low thermal conductivity are susceptible to thermal shock. Please click here forfor

Diode Sputtering

In diode sputtering, an electric potential difference is applied between the target and the substrate to form a plasma discharge inside a low vacuum chamber. The free electrons in the plasma are immediately removed from the negative potential electrode (cathode). These accelerating electrons collide with neutral gas atoms (Argon) in their path, causing the electrons in the shell of these atoms to separate. As a result, the gas atoms become positive ions and accelerate towards the cathode, causing the sputtering phenomenon. Glow discharge occurs when some of the positive ions return to their ground state by adsorbing free electrons and releasing photons.

This mechanism is called Diode Sputtering and the applied voltage can be DC (with constant poles) or RF (with alternating poles), depending on the target material. One of the problems with this method is that its coating rate is low and it takes longer to do the coating, which causes the target to heat up and damage its atomic structure, which is improved utilizing Magnetron Cathodes.

Are you interested in learning more about sputtering target materials? Contact us today to secure an expert consultation!