Silicon Dioxide (Fused Quartz) (SiO2) Sputtering Targets: The Ultimate Guide to Choosing SiO2 Sputtering

Acetron is recognized globally for our commitment to quality across various industries. Our mission is to deliver high-value products that meet the needs of our customers, aiming for a collective advancement in technology and satisfaction. Together, let's shape a brighter future.

Understanding SiO2 Sputtering Targets

Our extensive catalog of sputtering targets, evaporation sources, and additional deposition materials is organized by material on our website. You can find competitive pricing for sputtering targets tailored to your specifications. Please note that actual prices may fluctuate based on market conditions. For immediate inquiries about current pricing or specific quotes for sputtering targets and other deposition products not listed online, feel free to contact us.

General Information about Silicon Dioxide (SiO2)

Silicon dioxide, commonly referred to as silica, possesses the chemical formula SiO2. This material exhibits a melting point of 1,610°C and a density of 2.648 g/cc, with a vapor pressure of 10^-4 Torr at 1,025°C. In nature, silicon dioxide is predominantly found as sand or quartz and serves primarily in the glass manufacturing industry, especially for windows and beverage containers. Moreover, it is utilized under vacuum conditions for the fabrication of optoelectronic devices and integrated circuits.

Specifications for SiO2 Sputtering Targets

• Material Type: Silicon (IV) Oxide
• Symbol: SiO2
• Color/Appearance: White, Crystalline Solid
• Melting Point (°C): 1,610
• Theoretical Density (g/cc): ~2.65
• Z Ratio: 1.00
• Sputter RF Max Power Density (Watts/Square Inch): 30*
• Type of Bond: Indium, Elastomer
• Comments: Excellent in E-beam applications.

* The given values are recommendations derived from our operational experience with KJLC guns. The suggestions apply mainly to unbonded targets, and when using bonded targets, it's advisable to operate at reduced power to prevent bonding failures. Specifically, bonded targets should not exceed 20 Watts/Square Inch, depending on the material in use.

* The suggested maximum power densities assume a sputter-up orientation that ensures optimal thermal transfer. Deviations in sputtering orientation or inefficiencies in thermal interfaces may necessitate adjustments in your maximum power density and/or the use of thermal transfer paste. For precise power recommendations, please do not hesitate to reach out to us.

** The Z-ratio value is typically unknown; hence, we suggest using a standard value of 1.00 or determining it experimentally. For guidelines on conducting these determinations, please click here.

For further information regarding sio2 sputtering, don’t hesitate to connect with us.

Determining Z-Factors

Empirical Determination of Z-Factor

Unfortunately, Z-Factor and Shear Modulus values are often unavailable for a wide range of materials. In such instances, empirical determination of the Z-Factor is viable through these steps:

1. Deposit the material until the Crystal Life is near 50% or until expiration—whichever comes first.
2. Position a new substrate next to the utilized quartz sensor.
3. Set the QCM Density to the calibrated figure; adjust Tooling to 100%.
4. Zero the thickness measurement.
5. Deposit approximately 1A of the material onto the substrate.
6. Use a profilometer or interferometer to measure the actual film thickness on the substrate.
7. Adjust the Z-Factor setting on the instrument until it aligns with the correct thickness reading.

If changing the crystals frequently, you might ignore errors introduced. The graph illustrating the % Error in Rate/Thickness when using incorrect Z-Factor indicates that for a crystal nearing 90% life, the error remains insignificant even with considerable inaccuracies in programmed versus actual Z-Factor values.

Note:

• A specific ramp up and ramp down procedure may be essential for targets with low thermal conductivity, as thermal shock can be detrimental. For detailed Ramp Procedures related to Ceramic Target Break-in, please click here.

Sputtering Deposition Techniques

Diode Sputtering Explored

In diode sputtering, an electric potential is established between the target and substrate within a low vacuum chamber, inducing a plasma discharge. Free electrons are expelled from the negatively charged electrode (cathode), colliding with neutral gas atoms (Argon), ionizing them and prompting a chain reaction of sputtering. When some positive ions recombine with free electrons, they release photons, resulting in a Glow discharge. Dependent on the target material, the applied voltage can be either DC (constant poles) or RF (alternating poles). One limitation of diode sputtering is its relatively low coating rate, which lengthens the coating process and risks overheating the target's atomic structure — a challenge addressed by utilizing Magnetron Cathodes.

If you want to delve deeper into sputtering target materials, please don't hesitate to contact us for an expert consultation!